EPOCH TSV-D1000 Series is Cabot Microelectronics' new offering for oxide/copper polishing. It provides high throughput with high oxide rate and tunable Cu rate selectivity. Formulated as a tunable platform to meet a wide range of TSV integration design requirements.
Formulated as a high oxide removal rate with a tunable Cu rate selectivity resulting in higher throughput and lower cost of ownership
Balanced oxide, copper, tantalum and tantalum nitride removal rates with removal rate profiles easy to tune resulting in better product yield
Tunable oxide and copper selectivity can be adjusted to meet specific integration requirements
CMC's "CMP For Metal-gate Integration" article in Solid State magazine.
For over twenty years of IC manufacturing, the creation of planar device structures has required the use of technologies to reduce topographic variation. Chemical mechanical planarization (CMP) - pressing wafers into rotating pads in the presence of special slurry blends to produce removal through chemically amplified nano-scale abrasion - has become a critical part of modern IC fabrication. Click here to read the full article.