Semi-Sperse W6300

Wafer CMP Polishing


Semi-Sperseā„¢ W6300 Slurry

CMC W6300 Tungsten CMP Slurry

Product Summary

Semi-Sperse W6300 is a selective, high-purity slurry based on fumed silica and hydrogen peroxide technology. It provides improved planarity and cost of ownership for 90nm to 65nm nodes.




Features & Benefits

Improvement in Product Yield

  • Specially formulated high-purity slurry to achieve lower defectivity and excellent cleanability resulting in better product yield.
  • 50% reduction in defectivity (as compared to W2000).
  • 50% reduction in erosion (as compared to W2000).

Lower Cost of Ownership

  • Formulated as 2x concentrated slurry to reduce shipping and handling cost and achieve lower point-of-cost use.

Ease of Use

  • Colloidally stable formulation that is easy to mix, filter and handle.











CMC in Solid State Magazine

Chemical Mechanical Planarization For Metal-gate Integration

CMC's "CMP For Metal-gate Integration" article in Solid State magazine.

For over twenty years of IC manufacturing, the creation of planar device structures has required the use of technologies to reduce topographic variation. Chemical mechanical planarization (CMP) - pressing wafers into rotating pads in the presence of special slurry blends to produce removal through chemically amplified nano-scale abrasion - has become a critical part of modern IC fabrication. Click here to read the full article.