WIN W7000 utilizes fumed silica abrasives and CMC etch inhibitor technology to provide best–in-class planarization performance (e.g. less than 100 Å erosion) with minimization/elimination of edge-over-erosion (EOE) and a wide over-polish window for advance nodes. Full benefits of the high-selectivity technology have been obtained using engineered fumed silica coupled with CMP process optimization.
CMC's "CMP For Metal-gate Integration" article in Solid State magazine.
For over twenty years of IC manufacturing, the creation of planar device structures has required the use of technologies to reduce topographic variation. Chemical mechanical planarization (CMP) - pressing wafers into rotating pads in the presence of special slurry blends to produce removal through chemically amplified nano-scale abrasion - has become a critical part of modern IC fabrication. Click here to read the full article.